small signal product - these diodes are also available in do-35, ll34 package - surface mount device type - moisture sensitivity level 1 - matte tin (sn) lead finish with nickel (ni) underplate - pb free version and rohs compliant - packing code with suffix "g" means green compound (halogen-free) mechanical data - case: flat lead sod-123f small outline plastic package - terminal: matte tin plated, lead free, solderable per mil-std-202, method 208 guaranteed - high temperature soldering guaranteed: 260c/10s - polarity: indicated by cathode band - weight: 4.85 0.5mg symbol unit p d mw v rrm v i frm ma i o ma r ja o c/w t j , t stg o c symbol unit c j pf t rr ns note 1 : test condition : i r = 100 a note 2 : test condition : bav19w @ v r =100v, bav20w @ v r =150v, bav21w @ v r =200v note 3 : test condition : i f = i r = 30ma , r l =100 ? , irr=3ma document number: ds_s1501003 version: e15 1.25 5 50 - - - - 100 - 410 reverse breakdown voltage (note 1) forward voltage reverse leakage current (note 2) reverse recovery time (note 3) junction capacitance v r = 0 , f = 1.0 mhz v f parameter max power dissipation junction and storage temperature range thermal resistance (junction to ambient) -65 to +150 375 1 4 200 625 250 pulse width = 1 s non-repetitive peak forward surge current pulse width = 1 s i fsm min 120 200 - na bav20w bav21w bav19w i r i f = 100 ma v i f = 200 ma 1 v bav20w bav21w 250 - - bav19w v (br) a mean forward current repetitive peak forward current repetitive peak reverse voltage maximum ratings and electrical characteristics (t a =25c unless otherwise noted) parameter value bav19w/bav20w/bav21w taiwan semiconductor 410mw hi g h volta g e smd switchin g diode features sod-123f
small signal product (t a =25c unless otherwise noted) document number: ds_s1501003 version: e15 bav19w/bav20w/bav21w taiwan semiconductor ratings and characteristics curves 0.01 0.1 1 10 100 1000 012 forward current (ma) forward voltage (v) fig. 2 typicla forward characteristics 0.01 0.1 1 10 100 0 100 200 leakage current (ua) junction temperature ( o c) fig. 3 fig. 3 leakage current vs. junction temperature 0 50 100 150 200 250 300 0 25 50 75 100 125 150 power dissipation (mw) ambient temperature ( o c) fig. 1 admissible power dissipation curve
small signal product min max min max a 1.50 1.70 0.059 0.067 b 3.30 3.90 0.130 0.154 c 0.50 0.70 0.020 0.028 d 2.50 2.70 0.098 0.106 e 0.80 1.15 0.031 0.045 f 0.05 0.20 0.002 0.008 c g x x1 y part no. bav19w bav20w bav21w document number: ds_s1501003 version: e15 h3 h2 h1 1.80 0.071 marking code order information (example) marking 1.52 0.060 1.34 0.053 4.20 0.165 dim. unit (mm) unit (inch) typ. typ. 2.86 0.113 package outline dimensions sod-123f dim. unit (mm) unit (inch) suggest pad layout bav19w/bav20w/bav21w taiwan semiconductor bav19w rhg green compound ? code packing ? code part ? no.
small signal product assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_s1501003 version: e15 bav19w/bav20w/bav21w taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf,
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